Study On GeSi-based Waveguide Photodetector

Integrating optical devices with multi-function microelectronic ICs(integrated circuits) by mature microelectronic technology,Si optoelectronic integration is a promising solution for the prevalence and development of optical communication. Study on the Si-based OEIC (Optoelectronic Integrated Circuit) photoreceiver is very important for Si-based optical communication.We studied on the photodetectors of receivers in this paper.The main works are described as follows:1) Introduce the problem of optical fiber communication system and optical link,and the important progress of photodetectors in brief2) Analyze the property of the material of germanium silicon,such as:the structure of crystal lattice and energy band,the refraction index,absorption index,the critical thickness of GeSi on Si substrate and GeySil-y on GexSil-x substrate3) Explain the theory knowledge of optical waveguide,especially the methode of analyse and design of large single-mode rib waveguide — effective index index methode(EIM);design the structure of SiO2/Si/SiO2,SiO2/GeSi/Si large rib waveguide;moreover,design and simulate the structure of SiO2/GeySil-y/GexSil-x large rib waveguide4) Fabricate the PIN and MSM photodetectors of different sizes on Si substrate and GeSi substrate by Si-based 2um process in Institute of Semiconductors CAS; fabricate PIN and SML photodetectors by 0.35um standard CMOS process in Corporation Chartered.Simulate the PIN photodetector by device silulator-Atlas.At last make improvements on waveguide photodetector5) Introduce the method of testing...