The detailed study on the growth and characterization of highly strained InGaAs quantum well is carried out in this paper. We predicted the value of critical thickness under the mold of Matthews and Blakeslee. Through experiment we achieved the value of critical thickness of highly strained InGaAs QW .It is 8.5nm that beyond the value of Matthews and Blakeslee.According to the critical thickness of highly strained InGaAs QW. We designed the structure of highly strained InGaAs QW.And we test the sample which growthed under the best growth condition.And gained the peak of PL is 1.204μm,the FWHM is 28.6meV. |