Research Of Top-emitting Organic Light-emitting Devices Based On Silicon

Organic Light-emitting Devices (OLEDs) have attracted extensive interests in the fields of science and industry because of the advantage of light weight , low cost , broad visual angle , fast response, active emitting , high luminance, high efficiency , availability for full color display , etc . Top-emitting organic light-emitting devices (TOLEDs) based on silicon now are being a focus in the filed of OLED, since they are capable of achieving monolithic integration of an OLED displays on a silicon chip, fabricating OLED displays for higher display quality yet without sacrificing aperture ratios of pixels and suitable for making microdisplay on silicon.In this paper ,performance of TEOLEDs is improved by two methods.The first, electron injection is improved by inserting a semiconducting zinc oxide (ZnO) buffer layer between the electron-transporting and emitting tris-(8-hydroxyquinoline) aluminum (Alq3) layer and the semitransparent Al/Ag cathode in top-emitting organic light-emitting diodes (TEOLEDs) with structures of Si/SiO2/Ag/Ag2O/4,4ˊ , 4〞-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA)/ 4,4ˊ-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl (NPB)/Alq3/ZnO/Al/Ag. The ZnO interfacial layer plays a role in reducing the effective barrier height...