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Study On Frequency-Dependent Characteristics Of Distributed Parameters Of Passive Devices In RFICs

Posted on:2008-09-15Degree:MasterType:Thesis
Country:ChinaCandidate:Q HuaFull Text:PDF
GTID:2178360212476102Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
With the development of wireless communication industry, people have more demands on the dimension, speed, power consumption of wireless products. More recently, with the push of the commercial market, studies on radio frequency integrated circuits (RFICs) have become very hot area in industry and academia. As important elements in RFICs, passive devices have drawn much attention. The more improvements in system performance and operating frequency are achieved, the higher demands on performance of passive devices and model accuracy will be required.The main contributions of this paper is focused on frequency-dependent characteristics of distributed parameters of passive devices, including curved transmission lines, on-chip inductor, and metal via transition between co-planar waveguide and microstrip line.(1) A general interconnect structure is presented and a modified filament model is proposed to analyze frequency-dependent characteristics of interconnect lines on different surfaces, including frequency-dependent partial inductance and resistance. A simplified process is developed and employed to save computing time. Also, edge sharp and temperature effects in interconnect lines are examined.
Keywords/Search Tags:Radio frequency integrated circuit, skin and proximity effects, frequency-dependent series partial resistance, frequency-dependent series partial inductance, metal via transition, co-planar waveguide, microstrip line, silicon substrate
PDF Full Text Request
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