Design Of Ultra-Low-Power Operation Transconductance Amplifier Based On EKV Bulk-Driven MOSFETs

Analog and digital circuits with ultra-low power consumption can be widely used in many areas of applications. These devices themselves and the techniques of designing such devices have been now the hot research topics in the field of micro-nano-electronics. Among the available techniques of low power analog IC design, EKV bulk-driven MOSFET has being considered the most promising one. In this thesis we implement an ultra-low power operational transconduction amplifier based on this technique and the characteristics of the device are fully studied by applying circuit simulation method.Low-voltage low-power design relates to silicon chip manufacture technology, MOSFETs modeling, and circuits design strategies. These technologies are presented in this thesis and their advantages and disadvantages are analyzed. Circuits design strategies are emphasized in developing the low power device. The strategies include weak-inversion/ sub-threshold circuits, bulk-driven MOSFETs, floating-gate MOSFETs, self-cascode MOSFETs, current-mode circuits, and voltage-shift technologies.After that, we particularly compare two kinds of MOSFET models, i.e., BSIM3 MOSFET and EKV MOSFET, both popular now in analog IC design. BSIM3 MOSFET is now the widely accepted model, while EKV MOSFET model is relatively a new one. The latter is a fully analytical MOSFET model dedicated to the analysis and design of low-voltage low-power analog circuits and completely built on fundamental physical properties. Its structure is simple and thus can be easily updated for low-voltage low-power analog circuits design and simulation in deep-submicron CMOS technologies. Contrast to the traditional MOSFETs where the voltage and power dissipation are not synchronously decreased, the bulk-driven MOSFET is particularly useful in providing low power supply for the device while keeping its low power dissipation.For comparison of MOSFET models, we replace the traditional BSIM3 MOSFETs with EKV MOSFETs in MRC (MOSFET Resistor Circuit), which leads to a better simulation results for the symmetrical circuit. In order to overcome the limitation of low...