Theoretical Analysis Of New Generation Materials And Research On Selective Area Epitaxial Growing Characteristics

The research works described in this dissertation were supported by the grants from the research project Prof. Xiaomin, Ren led, National Basic Research Program of China-"Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications" (2003CB314900).Nowadays, optoelectronic devices face the turning point that they are rapidly replacing modules based on discrete devices, because the former offer the advantages of smaller dimension, lower parasitics, lower cost, better performance and higher reliability compared to the latter. Optoelectronic devices have already become extremely attractive domain as the fundamental research subject in the area of optical communications and optoelectronics. However, advantages of optoelectronic devices have been offset by the complexities of realizing high quality optical and electronic devices due to the limitation resulted from materials, structures and techniques. So great efforts must be paid to break through the tremendous difficulties against large scale and multifunction optoelectronic devices.The author focused on simulating the selective area epitaxial growth procedure of InP substrate and theoretical analysis of the new generation of semiconductor materials, supervised by Prof. Xiaomin Ren Prof. Yongqing Huang Prof. Hui Huang. The main research work in this thesis is listed below:...