Synthesizing carbon nanotubes (CNTs) at atmospheric pressure and relatively low temperature is a very important process for large-scale industrial application. In this paper we developed a dielectric barrier discharge(DBD)-PECVD system to synthesize CNTs directly on the surface of Si substrates. CH4/H2 gas mixture was processed in a DBD reactor operated at a half atmospheric pressure and 700℃. Ni/Al catalyst films were sputtered on the surface of Si substrate. Scanning electron microscopy (SEM) investigation on the CNTs films confirmed the bottom growth model, transmission electron microscopy (TEM) observation did not find bamboo-knot structure in the CNTs as other researchers often find in PECVD CNTs, and Raman analysis revealed that there are a great deal structure defects in the CNTs... |