Studies On The Key Technology Of SID

Based on the operational mechanism of SIT, the main electric parameters and construction are described and discussed in this thesis. The dependence of electrical characteristics on constructional parameters, material parameters, and technological parameters are analyzed in this article. Readjust the layout, in harmony with new layout to design the homologous process project, pass the single item experiment and get the best term of the process. For the parameter of the epitaxial layer, putting forward a series of measures that let up or repress deposition and self-doping when the epilayer processing, improve the epilayer quality. To cut off connecting department of gate-cathode (or source) electrode formed in the epilayer processing, and to open the electrode area, we used the mesa etching. To eliminate a variety of parasitic effect, we etched a shaft in outer side of active region, it guaranteed the breakdown occurrenced in the internal and realized the value close to the theoretical value.