The Characteristic Of Manufacture Of Power SIT,SITH

Combining with a scientific research item titled "The Research and manufacture of Static Induction Device"by institute of Microelectronics in Lanzhou University, the thesis has been carried out surrounding the manufacture of Power Static Induction Transistor(SIT) and Static Induction Thyristor (SITH), and described the characteristic of the manufacture of them.In the paper, we systemly described the operational mechanism of SIT(H) , emphasized the structure of SIT(H), I-V characteristic, the theory of the current transition and the formation of channel barrier. Based on these theories, in this paper we analyzed the regulation of constructional parameters, material parameters, and technological parameters, and their value has been given.Under the goal of good electrical property SIT , Combining with manufaction experience and problem, we designed new layout and process. After a great deal of experiment, we improved part of process.For improving breakdown voltage (BV_gso,BV_gko ), at the same time assuring good I-V characteristic, we did many experiments. Such as trough and step eroding. By testing chip, there are great improvement in basic electrical property. All these show our manufacture plan isreasonable and correct..