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A Study Of Special Detecting Purpose Optoelectronic Integration Device Design And Its Key Chip Structure

Posted on:2006-08-16Degree:MasterType:Thesis
Country:ChinaCandidate:F ZhangFull Text:PDF
GTID:2178360182975129Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
Being a new type anti-counterfeit material, optical frequency upconversion (downconversion) material has very good privacy and the converted optical wavelength is unique. In addition, the material itself is hard to fabricate and also has a long life. All these characteristics make optical frequency upconversion (downconversion) material an ideal one to add on security documents as well as banknotes as advanced anti-counterfeit features. Thus, a machine-readable detection equipment to detect and recognize such anti-counterfeit features with high efficiency and accuracy is badly needed, for the detection equipment has a promising future for application and determines whether the material can be used as the anti-counterfeit features or not. Since the separated detection system has many disadvantages and drawbacks, a new type optoelectronic integrated chip for the special detecting purpose is designed in this paper and the structure of its key device – a 980nm quantum well laser diode is thoroughly studied, so as to meet the device's demands of little temperature increase and high peak power output. The work has been done as follows: (1) Hybrid integration based on PLC is used for the integration method of the special detecting purpose optoelectronic integration device, and light transmission method is used for the detection means. (2) Optical system modeling software is used to design the layout of the whole system, and the system model is given. Based on the model, spatial light tracing is finished and the light distribution and transmission of the system are analyzed. (3) For the key component of the special detecting purpose optoelectronic integration device -a light emitting chip, the quantum well structure and its important parameters are theoretically discussed, based on which, the modulation method of the device is put forward, the detailed structure and the material system are determined. (4) With the help of professional design software, the thickness of the device's layers is determined, the device's important parameters are optimized, and, therefore, the structure model of the device is obtained. Finally, based on the model, the simulation results of the device's important parameters are presented.
Keywords/Search Tags:optical frequency upconversion (downconversion), optoelectronic integration, anti-counterfeit detection, 980nm quantum well laser diode, GRIN-SCH-SQW
PDF Full Text Request
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