The Study Of RF Integrated Inductor On Silicon

With the rapid growth of wireless communication markets, Si RF IC is recognized as a fascinating candidate to meet the demands of low-cost, high integration, and mature technologies. To date, most research on CMOS RF circuits is focused on CMOS RF design including some key blocks, and the performance of it is increasing.In Si RF IC, inductors need be realized on a silicon substrate along with all of the other devices in a single chip. In fact, the need for high Q integrated inductors in RF ICs is increasing. The aim of our research is to realize high-Q monolithic inductors in standard Si CMOS technology. The research of integrated inductors is reported in this dissertation. Major contents and results of the study are abstracted as following: 1. The review of integrated inductors is given, then, the structure and model of integrated inductors are introduced. The sense and the expression of the quality factor of integrated inductors" are explained and induced. The process and test of the inductor are given and available methods of improving the quality factor of integrated inductors are summarized.2. Based on analysis of the model of integrated inductors on silicon, geometrical parameters, process parameters , and the form of multi-layer are discussed. Then, the simulations of inductor parameters affect Q and Fres by a good performance simulator (ASITIC) are done, simulation results and their analysis are presented and principles about the design of spiral inductors on silicon are given , then the way and conclusion can be used in the design of integrated inductor in RF.3. An efficient optimization technique for RF planar spiral inductor is presented on the basis of the physical model of an inductor as well as the clone algorithm. With it, it is unnecessary to design an optimal high Q inductor by means of the contour plots of Q. which is high cost and time consuming as we all know. Via the new technique, the computation efficiency is improved greatly, because it combines the global research with partial research and has no shortcoming of premature. As a matter of fact, because of the flexibility of our technique, the actually best design can be obtained by using this technique instead of by the contour plots of Q. It is a good way to design the integrated inductor.