Experimental Study The Effects Of Low Energy Semiconductor Laser Irradiation On Vascular Ingrowth Into Hydroxyapatite Orbital Implants

Objective: To investigate the effects of low energy semiconductor laser irradiation on vascular ingrowth into rabbits coralline porous hydroxyapatite(CHA) orbital implants.Methods: Thirty New Zealand white rabbits were randomly divided into 3 groups (group A,B,C),each of which has 10 rabbits. The rabbits of group A taken as control group underwent right eye enucleation with placement of CHA implants. The rabbits of group B underwent right eye enucleation with placement of CHA implants combined with low power semiconductor laser irradiation on surgery, eye (each rabbit was continuously irradiated for 5 days in three days after operation ,once every day, five minutes). The rabbits of group C underwent right eye enucleation with placement of CHA implants combined with low power semiconductor laser irradiation on surgery, eye (each rabbit was continuously irradiated for 5 days in three days after operation ,once every day, five minutes. each rabbit was continuously irradiated for 5 days after one week). The rabbits were clinically examined for inflammation and implants exposure every day after implantation. At 1,2,4,6 and 8 weeks postoperatively,the average radioactive counts of both orbits in the same animal were measured, and the R/L ratios were calculated.At 8 weeeks,implants were extracted and examined histopathologically to compare the difference of the three groups in the degree of fibrovascularization of the implants.Result: 1,2,4 weeks after operation, the average R/L ratios of the CHA orbital implants added up weekly, group A was lower than group B, C (P < 0. 05).while the difference of the R/L ratios between group B, C wasn't significant. 6,8 weeks after operation, the average R/L ratios among three groups had no significant difference. All the CHA orbital implants had fibrovascularization at 8th week.Conclusion: 1 ) Low power semiconductor laser irradiation on surgery, eye could promote the fibrovascular ingrowth into CHA orbital implants in early stage. 2) Low power semiconductor laser irradiation on surgery, eye doesn't shorten the time required for complete fibrovascularization of the CHA implants.3) The addition treatment cycle of low power semiconductor laser irradiation on surgery, eye couldn, t significantly promote and shorten the time required for complete fibrovascularization of the CHA implants.