Research On Carbon Nitride Films Prepared By Ion Beam Sputtering

In this thesis, we research the characters on the ion beam sputtering system, and prepare TiNy films and CNx/TiNy multilayers by ion beam sputtering. The best parameters of preparing CNX films are explored. We use the TiNy films as template to promote the growth of CNX films.The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current. Accelerate voltage has less effect on these properties. The best incidence angle of N ion beam sputtering graphite target is 50 degree.The effects of experimental parameters on crystal structures of TiNy films are studied. The results show that Ti2N(200) tropism interplanar is obtained when the ion beam energy is 875eV and the current is 60mA. The Ti2N crystals embed in the films deposited at low temperature, while TiN crystals are formed at high temperature. The analyses of component show that the TiNy films are rich-nitrogen.The dependences of N contents in CNx/TiNy multilayers on experimental parameter are analyzed. The experimental results show that the N contents in the multilayers are higher at the lower incidence ion energy and current. The N contents increase with the increasing of the substrate temperature. The N contents in the films also arose by using the assisted ion beam. The highest N content in the CNx/TiNy multilayers is 49.52at%.The crystal structures and chemical bondings of the CNx/TiNy films are analyzed by the methods of SAED, XRD and XPS. The results show the p-CaN4 with size of nano lever and graphite-Ca with size of 3 um are formed in the CNx/TiNy films at room temperature, while p-CaN4 crystals with the shape of worm are comprised of the films deposited at higher temperature. XPS analyses show the chemical bonding schemes in the CNX layer are C-N and C=N bonds.