A Study Of The Strucuture And Properties Of Al And Cu Films Fabricated By Magnetron Sputtering

In ICF experiments, the metal film target is one important target. And the Al and Cu films are very important films in ICF Experiment. So, we must approach physical property of Al and Cu films. Need with microstructure target for Strong radiation source target, structure is researched of the preferred orientation cu films. Systematicaly study of the pure Al and Cu films is little reported.The influence of the different power and deposition pressure on the deposition rate, density, surface roughness, ultraviolet-infrared reflectance ratio and crystal structure of Al films has studied by the magnetron sputtering technology in this paper. At the same time, we analyzed the influences of the different annealing temperature on the basic performance of Al film, such as, surface smoothness, crystal structure, stress, ultraviolet-infrared reflectance ratio and resistivity. In addition, Cu films were prepared in the different substrate, power, thickness condition by the magnetron sputtering and its structure and preferred orientation were explored.Experiment indicated that the bigger sputtering power is, the faster deposition rate of films is, their relation curve is linear, whereas, its deposition rate exponentially reduced with deposition pressure enhancement. The influence of sputtering power on density of films is little, but density value of films is gradually less with deposition pressure enhancement. The least surface roughness value of film is obtained at the 60W, its value is increased with deposition pressure enhancement. The process condition annealing temperature has little affected surface roughness value of film.The Al and Cu films obtained in different process parameter condition are polycrystal and their structure is face-centred cubic. Internal stress of the films is released little by little, defect gradually reduced, crystal grain growth with annealing temperature increasing. By different substrate comparing, the film crystallization is better and its diffraction peak intensity is stronger on the quartz substrate. Ultraviolet-infrared reflectance ratio of the films has obviously heighened with annealing temperature increasing, has gradually reduced with deposition pressure enhancement and the relation of its value and annealing background vacuum degree is intimate. The maximum value of ultraviolet-infrared reflectance ratio of the films is achieved at the sputtering power 60W. The relation of annealing temperature and resistivity of films is investigated according to experiment. The higher annealing temperature is, the smaller resistivity is in room- temperature to several hundred degree centigrade. But the resistivity value is basicly invariable in room- temperature to negative more than one hundred degree centigrade.Both crystal size and stress of Cu film are growing with power increasing. By different substrate comparing, the film's stress is smaller and its crystal size is bigger on glass substrate. The preferred orientation character of Cu film is obscure on Si (100) and Si (111) substrate, whereas it is better on glass substrate. The preferred orientation character is deteriorative due to increasing of sputtering power and film thickness.