Study On The Growth Behavior And Mechanical Properties Of TiN/ZrN Nano-Mulitlayers

Nanomultilayers have a profound physical content and some special characters which single-layer film can not compared and attract a lot of intention of people. In this thesis, magnetron sputtering technology is used to prepare a series of thin films and the growth principle of ZrN thin film with different deposition rate, the microstructure and mechanism characters of two groups of TiN/ZrN multilayers with same TIN deposition characters and different ZrN deposition rate are discussed. Otherwise, TaN buffer layer is used to improve the even of multiplier's period and correlation of layers' growth.The result of this thesis is as follow: The result of this thesis is as follow: As for the growth of ZrN thin film, the texture of single-layer ZrN develops from the (200) to (111) and the grain size decease with the RF power increasing from 80W to 120W. The hardness enhancement and gain size of ZrN single-layer follow hell-patch relationship. The two groups of TiN/ZrN multi-layer films with 80W and 120W Rf power of ZrN layer have similar period and composition ratio but different correlation. The growth behavior of TiN layer and ZrN layer are related with interface match and the growth behavior of solo layer. The hardness of TiN / ZrN multilayer are higher than any single TiN or ZrN and decrease with the period increasing. The modulus of TiN / ZrN multilayer is between the modulus of TiN and ZrN and change with period of multilayer. The hell-patch effect caused by union gain size and alternative stress field theory could qualitatively explain the enhancement of multilayer. The quantitative result of simulation shows that the koehler's theory is not work neither. A TaN buffer layer in TiN/ZrN layer could improve the even of multiplier's period and deteriorate the correlation of layers' growth.