Study On The Deposition And Properties Of β-Silicon Carbide Films

SiC films are synthesized using two technologies of pulse laser deposition (PLD) and chemical vapor deposition (CVD) and the characteristics of SiC films are analysized in this paper. The morphology, ingredient, microstructures etal. are analysized by X-ray diffraction (XRD), Raman spectra, scanning electrical microscopy (SEM), high transmission electron microscopy (HRTEM) and photoluminescence (PL) respectively. The effect of the experimental parameters such as laser energy, substrate temperature etal on the growth of SiC is studied. In the experiment of one-mension material growth induced by metal, nanoparticles are obtained by laser ablation Fe target. Introduction of Fe nanoparticles as catalyst effectively decrease the deposition temperature of SiC nanowries, and promote SiC nanowries growth. Additionally, nanocrystalline SiC films are synthesized at low temperature using HFCVD. Films are detected by PL and luminescence mechanism of samples visible light emitting at room temperature are investigated. The SiC nanowires are deposited at low temperature assistant with oxygen using HFCVD technique. The nanowries growth and the effect of silicon oxide as catalyst on the growth of SiC are discussed.