Model And Monte Carlo Simulation Of Thin Film Growth

Crystal materials, an important function material, have an important application in modern high-technique. The theory of crystal growth is guidance for developing a new-type crystal and improving the properties of custom crystal. Modeling and simulation based on computer technology has been an important method for studying on crystal growth. In this article, the model of the early stage of thin film growth has been instituted based on the experiment results and by using the theory of crystal growth. Two-dimension growth and three1dimension growth process of thin films have been simulated using Monte Carlo method. Parameters of the structure of thin films have been studies, and research results are in good agreement to the experimental results.The interaction between particles has been investigated using Morse potential in which the range of the interaction i.e. a has more influence on the morphology of the films. When a is small, it is island growth and growth of films evolves four stages including formation of critical nucleation, growth of clusters, formation of maze structure and appearance of continuous film. When a is larger, it is layer growth.The plots of the growth process of clusters reveal that the percentage of the number of particles about a certain cluster size is linear with the cluster size and at an angle each other when a is 2. But it is not clear when a is 6.Two-dimension growth and three-dimension growth of the films have been simulated. At a2, the second layer is beginning growth when the coverage of the first layer is not high. So the different model has different results.