Studies On The Electroresistance Of The Manganite Heterojunctions And Films

The perovskite manganite have attracted significant scientific attention due to their Colossal Magnetoresistnace effect (CMR) and charge order phenomena, their Colossal Magnetoresistnace effect have very broad prospect of application in magnetic storage, magnetic sensor pieces, spin valve and spin transistor. Especially, studies for the high quality manganite films is very important prerequisite for this kind of material can eventually to the device application. In manganite system, freedoms of spin, charge, rail and crystal lattice have strong relevance, their interaction and mutual competition caused rich physical phenomenon, which led that the transport properties of manganite very sensitive to the magnetic field and the electric field. We could make full use of these properties, use extra field control the device composed of manganite. People have studied more about the manganite-based p-n junctions, however, the electric field has not introduce yet. In the last few years, a new physical phenomenon known as the resistance switching effect, which is induced by an electric current or electric field, has become an interesting topic of study for next-generation non-volatile memory.We have studied the transport properties of LCMO/SNTO heterojunction and manganite films with different thichness under applied magnetic field and electric field, try to discuss the theory mechanism, and get better application effect in experiment.