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Adulteration Study Of P-type Transparent Conducting Oxide CuAlO2

Posted on:2011-01-25Degree:MasterType:Thesis
Country:ChinaCandidate:F F GuoFull Text:PDF
GTID:2120330338480578Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Based upon the theory of"the chemical modulation of the valence band", CuAlO2 thin films with delafossion structure were firstly prepared as a p-type transparent conducting oxide (TCO) by Kawazoe in 1997. CuAlO2 thin films have attracted much attention since they were found to be p-type TCOs. However, the preparation of CuAlO2 thin films with excellent properties always is a very difficult case. So far several growth methods have been investigated for the deposition of CuAlO2 thin films including pulse laser deposition (PLD), magnetron sputtering, chemical vapor deposition and so on.In this paper, to prepare the CuAlO2 thin films with excellent properties, fabrication procession of high-quality CuAlO2 ceramics targets were explored firstly. Ceramics targets of CuAl1-xMxO2(M=Mg , Ca, x=0, 0.0025, 0.005, 0.01, 0.015 and 0.02)was synthesized by heating a stoichiometric mixture of Cu2O, Al2O3, MgO and CaO powder at different temperature for different time. XRD, SEM and four-probe were used to characterize crystallization microstructure and electrical properties. XRD results show that all diffraction peaks can be attributed to CuAlO2 for un-doped CuAlO2 ceramics targets and there is a small amount of phase of CuO for M-doped CuAlO2 ceramics targets (M=Mg , Ca). SEM results show that the higher temperature is, the bigger crystalline grain is. Four-probe results show the electrical conductivity un-doped CuAlO2 ceramics targets at 16 degree centigrade is about 9.87×10-3S/cm and the electrical conductivity M-doped CuAlO2 ceramics targets (M=Mg , Ca) at 16 degree centigrade increases first and then reduces with the content of M and the maximum conductivity of Mg, Ca doped is 2.34×10-2S/cm , 2.016×10-2S/cm with x=0.01, respectively.In view of virtue of PLD, CuAlO2 thin films were deposited on (00l) sapphire substrates by PLD using CuAlO2 ceramics as targets synthesized by the conventional solid-state reaction. XRD, SEM and four-probe were used to characterize crystalline phases, microstructure and cross-section, optical properties and electrical properties of CuAlO2 thin films. XRD results show that CuAlO2 thin films are polycrystalline and principal diffraction peaks can be identified as diffraction peaks of CuAlO2 . SEM results show surfaces morphology of CuAlO2 thin films are uniform and dense and the films are tightly attached to substrates. The optical transmission spectra results show the average optical transmittance in visible region are more than 75% for the films deposited at different conditions. The results of the electrical properties indicate that substrate temperature and oxygen pressure sorely influence the conductivity of CuAlO2 thin films. The higher substrate temperature and the lower oxygen pressure are propitious to improve the conductivity of CuAlO2 thin films.
Keywords/Search Tags:CuAlO2 ceramics, CuAlO2 thin film, Pulse laser deposition (PLD), Optical and electrical properties
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