Research On Key Circuits Of 130GHz 10Gbit/s Wireless Data Communication System Chip By Silicon-based Technology

In recent years, with the rapidly growth of multimedia applications, the demand of high-speed wireless data communication system is continuously increasing. In order to provide the required bandwidth of high-speed data communication system, the operation frequency has approached millimeter-wave band and even beyond 100GHz. So the research of integrated circuit operating beyond 100GHz has great scientific value and practical value. Several millimeter-wave integrated circuit, especially operating beyond 100GHz have been design in?-?compound semiconductor due to its good performance at high frequency. To date, silicon-based semiconductor technology has developed rapidly. The performance silicon-based transistor is compatible with?-?compound semiconductor. In addition, the silicon-based semiconductor technology has dominated baseband and analog circuit design. So base on silicon-based technology to design the millimeter-wave integrated circuit operating beyond 100GHz has a lot of advantages, such as integration level and fabrication cost. Then the research of silicon-based millimeter-wave integrated circuit design, especially operating beyond 100GHz and its application in high-speed data communication system is of great significance.The dissertation analyzed and studied the feasibility and challenge of silicon-based millimeter-wave integrated circuit operating beyond 100GHz. Then the key circuits of 10Gbit/s high-speed data communication system operating at 130GHz have been analyzed and designed. The main contribution as follow:1. The feasibility and practicability of silicon-based millimeter-wave and submillimeter-wave integrated circuit design have been analyzed in this work. The main challenge has been discussed and then some solutions and design methods have been provided. In addition, the accuracy of transistor model and the impact of parasitic elements at such high frequency have been studied. Then a new de-embedding method has been proposed to get more accurate measurement result and model of transistor at such high frequency. Base on this, the better accuracy and reliability of millimeter-wave and submillimeter-wave circuit design has achieved.2. A new high-speed ASK modulator circuit has been designed by 0.13?m MOSFET transistor. It can be used for modulation of 130GHz carrier with 10Gbit/s. The input impedance of whole circuit can be stable at both signal-pass and signal-stop status. So it helps to keep its front-stage signal source and whole transmitter with high stability. Moreover, from the measurement results, it also suitable for millimeter-wave T/R switch application.3. The methodology of millimeter-wave power amplifier design has been discussed. The main challenge of silicon-based technology in millimeter-wave power amplifier design has been analyzed and some solutions have been proposed. Then a new 130GHz millimeter-wave power amplifier has been designed in silicon-based technology. A matching network design method by thin-film microstrip line has been studied. Some bandwidth extension design method in millimeter-wave amplifier design has been proposed and discussed. In addition, the optimization method of millimeter-wave power amplifier output power has been provided.4. A new 130GHz millimeter-wave low noise amplifier has been designed in silicon-based technology. In this work, a gain-boosting method has been used to enhance the gain performance. Moreover, the parameters in millimeter-wave low noise amplifier design and their impact on the performance of amplifier, such as gain, noise, haven been studied.5. In order to meet the requirement of high speed wireless receiver, a new wide-band automatic gain control amplifier has been proposed. In this work, a new structure of variable gain amplifier has been used to improve the dynamic range of whole circuit. In post amplifier design, the bandwidth enhancement technique has been used. Moreover, a new peak detector and control voltage generate circuit has been designed to fulfill the requirement of new variable gain amplifier.6. Base on previous works and results, the research and analyses of integrated high-speed wireless receiver have been done. Then an integrated 130GHz 10Gbit/s wireless receiver circuit has been designed in silicon-based technology. In this work, the main challenge in integration of high-speed wireless receiver has been analyzed, and then some solutions and design methods have been proposed.