METAL/GALLIUM-ARSENIDE INTERFACES: THE SCHOTTKY BARRIER

The research conducted was aimed at the understanding of metal-GaAs interfaces in an attempt toward improving Schottky mixer diodes for mm wave applications. The analysis of interfaces is carried out with traditional methods such as C-V, I-V measurements and Auger Electron Spectroscopy. The theory of Auger process along with its application to the specific problem at hand is discussed. Pt/GaAs interface is studied with different chemical treatments and laser annealing conditions. Electrical measurements are carried out and correlated to AES results. It is found that excess As degrades electrical performance of Schottky diodes. Au/GaAs and Au/Pt interfaces are discussed for their relevance in Schottky diodes. The study is concluded with analysis of a specific ohmic contact to GaAs and results discussed in ohmicity formation.