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Microwave hybrid integrated circuit applications of high transition temperature superconductor

Posted on:1995-12-28Degree:Ph.DType:Dissertation
University:University of CincinnatiCandidate:Lu, Shih-LinFull Text:PDF
GTID:1478390014989962Subject:Engineering
Abstract/Summary:
This research work involves microwave characterization of high Tc superconducting (HTS) thin film using microstrip ring resonators, studying the nonlinear properties of HTS thin film transmission lines using two-tone intermodulation technique, coupling mechanisms and coupling factors of microstrip ring resonators side coupled to a microstrip line, two-port S-parameters measurements of GaAs MESFET at low temperature, and the design and implementation of hybrid ring resonator stabilized microwave oscillator using both metal films and superconducting films.; A microstrip ring resonators operating at 10 GHz have been fabricated from YBCO HTS thin films deposited on one side of LaAl{dollar}sb2{dollar}O{dollar}sb3{dollar} substrates. Below 60{dollar}spcirc{dollar} Kelvin the measured unloaded Q of the HTS thin film microstrip ring resonators are more than 1.5 times that of gold film resonators.; The two distinct but very close resonance peaks of a ring resonator side coupled to a microstrip line are experimentally identified as due to odd-mode and even-mode coupling. These two mechanisms have different characteristic equivalent circuit models and lead to different coupling coefficients and loaded resonance frequencies. The coupling factors for the two coupling modes are calculated using piecewise coupled line approximations.; The two-port S-parameters measurement techniques and GaAs MESFET low temperature DC and microwave characteristics have been investigated. A system errors model including the errors caused by the line constriction at low temperature has been proposed and a temperature errors correction procedure has been developed for the two-port microwave S-parameters measurements at low temperature. The measured GaAs MESFET DC characteristics shows a 20% increase in transconductance at 77{dollar}spcirc{dollar} K. There is also a 2 db increase in /S21/ at 77{dollar}spcirc{dollar} K.; The microwave oscillator stabilized with both metal and HTS thin film ring resonators have been studied. The tuning ability of the oscillator by a varactor diode has also been investigated. The phase noise performance of one side of the high Tc film oscillator does not show appreciable improvement over the gold film oscillator. With a varactor diode, the oscillator tuning range can be 300 MHz more.; Two-tone intermodulation distortion (IMD) at 6.3 GHz in an HTS YBCO superconducting thin film microstrip transmission line on LaAl{dollar}sb2{dollar}O{dollar}sb3{dollar} substrates are experimentally studied. At fixed input power, the 3rd order IMD power as function of temperature shows a minimum at a temperature around 60{dollar}spcirc{dollar} Kelvin. With DC current applied, the second order IMD is observed and shows a strong functional dependance to the applied DC current and input power.
Keywords/Search Tags:Microwave, Microstrip ring resonators, Temperature, HTS, Gaas MESFET, IMD, Line, Using
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