| Several aspects of processing InAs, GaSb and related semiconductors, including defect control, ion implantation, annealing, ohmic contacts and oxidation were studied here.; N-type conductivity in p-InAs was obtained by hydrogen plasma treatment in which hydrogen passivation of acceptors leaves the residual donors uncompensated. Proton implantation also produced an n-type layer in p-InAs but by creating donor-type defects, thus higher leakage current and weaker photo-response were observed in the np junctions. Low energy, high dose (40 keV, {dollar}10sp{lcub}15{rcub}{dollar} cm{dollar}sp{lcub}-2{rcub}{dollar}) Zn implantation produces p-type layer in n-InAs after 700{dollar}spcirc{dollar}C, 10s anneal. Leakage current of Zn implanted mesa type InAs diodes was dominated by perimeter components.; Te is DX-like centers in Al-rich MBE grown AlGaAsSb layers, and high Te concentration leads to low apparent electron concentration and abnormally high mobility which might be caused by Te precipitates. The electrical properties of Be-doped and undoped p-AlGaAsSb were normal. Hydrogen plasma treatment caused significant decrease of the concentration of electrically active centers. Proton implantation produced conduction conversion in n-type layers and some decrease of hole concentration in p-type layers. The Schottky barrier heights and heterojunction band offsets involving AlGaAsSb, InGaAsSb and GaSb were studied and correlated to the native defects.; Rectifying contacts to n-GaSb were converted to ohmic ones after heat treatment. As-deposited contacts to p-GaSb were almost ohmic and further decrease of the contact resistivity was obtained after heat treatment. Specific contact resistivities of low {dollar}10sp{lcub}-6{rcub}Omegacdot{dollar}cm{dollar}sp2{dollar} were obtained for sputtered Au/W/Ni/Ni-In/Ni contacts to both n- and p-type GaSb after annealing at 550{dollar}spcirc{dollar}C for 10 s. These contacts were stable at 400{dollar}spcirc{dollar}C for up to 100 hours.; The possibility of making MIS structures on GaSb utilizing native oxides was studied. Both dry and wet oxidation at various temperatures and using different carrier gases were performed. It was found that Sb was grown epitaxially during oxidation due to different oxidation rates of Ga and Sb, and the native oxides of GaSb thus formed were conductive. |
