Growth and characterization of indium antimonide and indium thallium antimonide narrow-bandgap materials for infrared detector applications

nSb and InTlSb epitaxial films have been grown by low-pressure metalorganic chemical vapor deposition for infrared detection applications. InSb is the preferred material for detector applications in the mid-wavelength infrared (3-5 ;InTlSb is a novel Sb-based material for the long-wavelength infrared (8-12 ;Simple InSb and InTlSb photon detectors on GaAs substrates have been fabricated and characterized for the first time. An InSb photovoltaic detector on GaAs showed a clear photoresponse up to 200 K and InTlSb photoconductive detector with a 77 K cut-off wavelength of...