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Correlating Interfacial and Bulk Nanostructure with Performance of Organic Electronic Devices

Posted on:2013-11-13Degree:Ph.DType:Dissertation
University:North Carolina State UniversityCandidate:Yan, HongpingFull Text:PDF
GTID:1458390008983212Subject:Physics
Abstract/Summary:
Resonant soft X-ray re ectivity and scattering (R-SoXR and R-SoXS) are used to investigate the interfacial and bulk nanomorphology of organic electronics including organic solar cells (OSCs), organic field-effect transistors (OFETs) and organic light-emitting diodes (OLEDs). Nanomorphology changes as function of fabrication conditions are revealed with the aid of R-SoXR and R-SoXS techniques. The morphology characterizations are correlated to device performances to better understanding of the device physics. A self-consistent method of measuring the complex index of refraction, n = 1 − δ + iβ with high accuracy yet without complicated instrumentation is also developed to facilitate the device characterization. With the guidance of the measured index of refractions of the organic materials, R-SoXR and R-SoXS are productively applied to measure interfacial width of buried interfaces of multilayer systems and domain properties in phase separated polymer blend systems, respectively. The results assist the organic electronic community to better understand the in uence of processing method on the nanomorphology and hence the device performance. These discoveries provide both physicists and engineers in this field with instructions both to better understand the working mechanism and to improve the device e&...
Keywords/Search Tags:Device, Organic, Interfacial, R-soxr and r-soxs
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