Chemical and physical understanding of diffusion barrier layers on semiconductors: (hfac)copper(VTMS) and its ligands on silicon(100)-2 x 1 and titanium carbon nitride-covered silicon

The goal of this dissertation was the atomic and molecular level investigation and understanding of the surface chemistry relevant to metal/semiconductor contacts. The study focused on the most commonly used precursor molecule for the formation of TiCN diffusion barrier, tetrakis-dimethylamino-titanium, and on one of the most commonly used copper deposition precursor sources, (hexafluoroacetylacetonato)copper(vinyltrimethylsilane), (hfac)Cu(VTMS).*; As indicated in figure 1, the approach included studying not only the copper precursor but also each of its ligands separately both on Si(100)-2x1 surface as described in Part 1 of this dissertation, and on TiCN pre-covered Si(100)-2x1 surface as summarized in Part 2. This approach allowed not only to understand the chemistry of copper deposition but also to identify the source of impurities such as C, O, and F.; After a brief introduction given in chapter 1 and a description of the experimental techniques in chapter 2, the complex thermal chemistry of vinyltrimethylsilane (VTMS) on Si(100)-2x1 surface is discussed in chapter 3 of this dissertation.; The thermal chemistry of hexafluoropentanedione (hfacH) on Si(100)-2x1 surface is presented in chapter 4.; In chapter 5, the results of the surface chemistry of the (hfac)Cu(VTMS) precursor on Si(100)-2x1 surface are presented.; The thermal chemistry of vinyltrimethylsilane (VTMS) on TiCN pre-covered Si(100)-2x1 surface is presented in chapter 6.; The thermal chemistry of hexafluoropentanedione on TiCN pre-covered Si(100)-2x1 surface is described in chapter 7.; Finally chapter 8 discusses the thermal chemistry of (hexafluoroacetylacetonato)copper(vinyltrimethylsilane), (hfac)Cu(VTMS), on TiCN pre-covered Si(100)-2x1. (Abstract shortened by UMI.); *Please refer to dissertation for diagrams.