Design & Experimental Analysis Of Si LED Based On Standard CMOS Technology

To improve the signal transmission speed of silicon chips, solve the delay and cross problems of signal transmission, the research focus is to use the light signals transmission within chips. This needs to fabricate light emitting devices in Si chips. According to different principle of semiconductor physics, this paper has designed many silicon LED devices by using 0.35 um standard CMOS technology, and fabricate these Si LED, at last analysis the test results. The mainly innovation points in the thesis are as follows:1. Use standard CMOS 0.35um dual gate process, according to the principle of electric field confinement effect, the N+-Psub junction wedge and leaf type of Si LEDs are designed, which emit light under the reverse bias avalanche breakdown. The devices'optical properties and electrical properties are tested and analyzed. Device area are respectively 34.2×42um~2 and 94.2×114um~2. The forward bias threshold voltage of the two devices is 0.7V and the avalanche breakdown threshold voltage is 8.8V. We find that the applied electric field confinement effect is related to materials design of semiconductor and the distribution of electrode. The light power is 10.2nW around with 50mA.2. Use standard CMOS 0.35um dual gate process, according to the principle of uniform electric field with interdigital electrode, the Psub–Nwell junction interdigital Si LED is designed, which emit light under the reverse bias avalanche breakdown. The LED area is 60×52.8um~2. The uniform electric field intensity helps the LED to emit uniform light. The forward bias threshold voltage is 0.8V, and the reverse bias avalanche breakdown threshold voltage is 15V. The light power is 7nW around with 50mA.3. Use standard CMOS 0.35um EEPROM process, according to the principle of uniform electric field with interdigital electrode and the principle of injecting carriers to enhance emitting light, three terminals N+-Psub Si LED is designed. The device works under avalanche breakdown and the area is 64×80.8 um~2. The device forward bias threshold voltage is 0.7V, and the reverse avalanche breakdown threshold voltage is 9V around.4. Use standard CMOS 0.35um dual gate process, an N~+- Psub junction gate- controlled U type of Si LED that can laterally emit light is designed. The device can worked as emitting light device and receive light device. The 5. Use standard CMOS 0.35um dual gate process, the N~+-Psub junction U type and ring type of silicon LED devices are designed, which emit light under forward bias. These devices can emit light under forward bias and reverse bias. The light spectrum is different between the two bias conditions. The gate is designed in these LEDs to modulate the Si LED's emitting light under forward bias. We find that the emitting light of the silicon LED includes the emitting light of PN junction forward bias and MIS. The light peak value is located at 1100nm under forward bias with 100mA.