Study And Design Of Binary And Ternary Circuits Based On The Resonant Tunneling Device RTD

With the development of integrated circuit manufacturing techniques, the characteristic dimension (CD) of devices has been decreased to nanometer scale, the CD of traditional technologies could not satisfy the requirements of VLSI gradually, which is related to the CD of the devices closely. So the development of silicon technology will slow down even stop in the next ten years or much shorter time if these problems could not be solved. In order to enhance the integration greatly, make it continue to follow Moore's Law and scaling rule, it must achieve greater breakthrough in devices. Resonant Tunneling Diode (RTD) is one of the most popular quantum devices in recent researches with the characteristics of ultra-high-speed, ultra-high-frequency, ultra-high-integration density, high efficiency and low power loss. Its negative differential resistance (NDR) feature makes it have broad application area in digital circuits and RF circuits, and reveals a very important application prospect in VLSI in the future. It will study, design, analyze and realize several kinds of resonant tunneling circuits in binary logic and multiple-valued logic region based on RTD in this paper.Firstly, it realizes the binary RTD logic operation units, In binary RTD circuits, it does not have a systematic design method like the traditional digital circuits, especially in the basic logic units design, it cannot use simple design methods such as Karnaugh map or truth table. So, a switch-transmission algebra theory applied to resonant tunneling circuits is proposed based on both the conventional digital switch-signal theory and the characteristic of resonant tunneling devices. An algebra system describing the switch-transmission logic of resonant tunneling is established by adding two types of resonant tunneling correlation operations to the algebra system for the conventional digital ICs. The corresponding basic circuit structures of the correlation operations can be realized by MOBILE units. Then the method to design resonant tunneling circuits by using 3-level Karnaugh map and its applications are discussed in details. It makes the circuit design more flexible and offers an improved fundamental theory and systemic design way for resonant tunneling circuits based on logic unit design.Flip-flop is the key part of memory circuits. It has two ways for binary RTD flip-flops by using MOBILE and RS flip-flop to design JK flip-flop and D flip-flop. It not only riches the types of resonant tunneling flip-flops, but also makes up the monotone by only using MOBILE to design RTD flip-flop.It also analyzes the theory of switching sequence, proposes the switching model of RTD circuit, based on the model and the switching sequence theory, the ternary RTD logic operation units are designed and improved.In ternary RTD flip-flop, it proposes the way to design ternary flip-flop and realizes the RTD D flip-flop with three-output track based on the literal operation. The ternary D flip-flop circuit has the functions with synchronous pre-set and pre-reset.The physical faults are analyzed and the testability design methods are proposed for RTD circuits based on the stuck faults analysis and stuck faults model, which take MOBILE and ternary RTD quantizer as examples. By setting different input and testing signals, it generates different testing vectors, and can detect all the open circuit faults and short circuit faults in RTD circuits.Finally, this dissertation concludes with a perspective of further research on low power, multiple-threshold neural network and the process based on the InGaAs/AlAs/InP RTD.