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Keyword [electron mobility]
Result: 161 - 180 | Page: 9 of 10
161. Strained indium(0.52)aluminum(0.48)arsenide/indium(x)gallium(1-x)arsenide (x greater than 0.53) high electron mobility transistors (HEMT's) for microwave/millimeter -wave applications
162. Fabrication and characterization of GaN-based high electron mobility transistors
163. Investigation of Gallium Nitride Heterostructures for Application to High Electron Mobility Transistor
164. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy
165. Studies Of Polarization Coulomb Field Scatter Related To Barrier Layer And P-GaN Layer In GaN-Based Heterostructure Field-Effect Transistors
166. Research On AlGaN/GaN HEMT Biochemical Sensor With High Density Biomolecular Film Gate
167. Research On GaN High Electron Mobility Transistor With Recessed Gate Based On Self-terminated Thermal Etching Method
168. Research On Key Techniques For Gan Power Transistor With Working Frequency Over 90 GHz
169. Influence Of Optical Phonons On Electron Mobility And Transition In Asymmetric ?-N Semiconducotor Heterostructures
170. Study On Gold Nanoparticle Enhanced Performance Of Two-dimensional WS2 Photodetector
171. Large Signal RF Equivalent Circuit Modeling Of GaN HEMT Based On Physics
172. Research On AlGaN /GaN Based High Electron Mobility Transistors And The Piezotronic Modulation
173. Device Structure Design Of GaN Based HEMT Power Electronic Device
174. Research On The Sensing Performance Of GaN-based High Electron Mobility Transistors
175. Research On Reverse Electrical Characteristics Of Lattice Matched InAlN/GaN High Electron Mobility Transistors
176. Study On Breakdown Characteristics Of High Electron Mobility Transistors Based On Gallium Nitride
177. Modeling And Parameter Extraction Software Design Of DC Characteristic Of High Electron Mobility Transistor
178. Research On Mechanism Of Photoelectrochemical Etching And Device Process Of Gallium Nitride
179. Research On The Performance Of GaN-based HEMT And Its Optoelectronic Integrated Devices
180. High-Temperature Small-Signal Model Analysis Of AlGaN/GaN HEMT
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