Font Size:
a
A
A
Keyword [breakdown voltage]
Result: 161 - 180 | Page: 9 of 10
161.
Research On The Novel Device Structure Of SOI LDMOS Based On The Trench Technology
162.
New Structure And Model Of High Voltage MOS-gated Power Devices With Low Power Loss
163.
The Simulation Study Of The 4H-SiC UMOSFET With Non-uniformly Doping Floating Junction
164.
Investigation On Breakdown Characteristics Of AlGaN/GaN HEMT With Gate Field Plates And New Drain Field Plates
165.
Study On High ? Dielectric Stack Gate AlGaN/GaN MOS-HEMT Characteristics
166.
New Lateral Superjunction Power MOSFETs Based On Electric Field Modulation
167.
Research On Characteristics Of AlGaN/GaN HEMT Based On Field Plate And LDD Technology
168.
Design And Simulation Of Novel Low Voltage LDMOS Structures
169.
Design Of Novel Trench LDMOS And N Covered SJ LDMOS
170.
Design And Manufacturing Of A 60V Trench MOSFET With Lower Conductive Resistance
171.
Research Of New SOI High Voltage Devices Based On The Technology Of Lateral Variable Reduced Surface Field
172.
Research On New Type Of SOI-LDMOS High Voltage Power Debice Structure Used In Buck Circuit Of Switching Power
173.
Design And Analysis Of SJ-IGBT Based On TCAD
174.
Optimization Design Of 650V Power VDMOS With JTE Structure
175.
An Investigation Into Switching Characteristics Of Trench SOI-LDMOS Device
176.
Research On Structure Design And Simulation Study Of Enhancement-mode AlGaN/GaN HEMT
177.
Breakdown Mechanism And New Structure Of Vertical GaN Based Device
178.
Research Of FS-IGBT With Ultra-Low Power Loss
179.
Research On Mechanism And New Structures About Negative Differential Regime In SOI SA-LIGBT
180.
Research And Design For A Novel 700V LDMOS With Low Specific On-resistance
<<First
<Prev
Next>
Last>>
Jump to
